Vishal Yadav
Technology
July 2025
Millimeter-wave(mmWave) transceivers operating in the 24–40 GHz range are essential for next-generation communication systems, particularly in 5G networks. However, designing efficient Low-Noise Amplifiers (LNAs) and Power Amplifiers (PAs) remains challenging due to power constraints, signal attenuation, and noise amplification. Traditional amplifier designs often struggle to balance gain, noise figure (NF), and efficiency while ensuring stability across wide frequency bands, and many existing studies rely solely on simulations without empirical validation. This study presents an optimized LNA-PA architecture incorporating cascode LNA designs and Doherty PA configurations using CMOS, SiGe, and FinFET technologies. Unlike previous works, this research integrates real-world validation using data from the ETH Zurich LNA Survey to benchmark semiconductor process performance. Mathematical models for gain, NF, and efficiency provide a theoretical foundation for circuit optimization, while genetic algorithms and Monte Carlo simulations improve power efficiency and assess process variations for enhanced reliability. The findings demonstrate that FinFET-based LNAs offer superior noise performance, while SiGe-based designs provide an optimal trade-off between noise and power efficiency. The proposed design methodology advances mmWave transceiver efficiency, making it highly suitable for 5G and future wireless communicaon systems
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© Airo Journals 2021
